Potential applications of carbon nanotubes

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Carbon nanotubes, a type of fullerene, have potential in fields such as nanotechnology, electronics, optics, materials science, and architecture. Over the years new applications have taken advantage of their unique electrical properties, extraordinary strength, and efficiency in heat conduction.

Contents

Structural

Carbon nanotubes have valuable qualities as structural materials. Potential uses include:

Electromagnetic

CNT can be fabricated as electrical conductors, insulators, and semiconductors. Applications include:

Electroacoustic

Chemical

Mechanical

Electrical circuits

A nanotube formed by joining two nanotubes of different diameters end to end can act as a diode, suggesting the possibility of constructing computer circuits entirely of nanotubes. Because of their good thermal transmission properties, CNT can potentially dissipate heat from computer chips. The longest electricity conducting circuit is a fraction of an inch long.[18]

Fabrication difficulties are major hurdles for CNT. Standard IC fabrication processes use chemical vapor deposition to add layers to a wafer. CNT can so far not be mass produced using such techniques.

Researchers can manipulate nanotubes one-by-one with the tip of an atomic force microscope in a time-consuming process. Using standard fabrication techniques would still require designers to position one end of the nanotube. During the deposition process, an electric field can potentially direct the growth of the nanotubes, which tend to grow along the field lines from negative to positive polarity. Another technique for self-assembly uses chemical or biological techniques to move CNT in solution to determinate places on a substrate.

Even if nanotubes can be precisely positioned, engineers have been unable to control the types (conducting, semiconducting, SWNT, MWNT) of nanotubes that appear.

Interconnects

Metallic carbon nanotubes have aroused research interest for their applicability as very-large-scale integration (VLSI) interconnects because of their high thermal stability, high thermal conductivity and large current carrying capacity.[19][20][21][22][23][24] An isolated CNT can carry current densities in excess of 1000 MA/sq-cm without damage even at an elevated temperature of 250 °C (482 °F), eliminating electromigration reliability concerns that plague Cu interconnects. Recent modeling work comparing the two has shown that CNT bundle interconnects can potentially offer advantages over copper.[25] Recent experiments demonstrated resistances as low as 20 Ohms using different architectures,[26] detailed conductance measurements over a wide temperature range were shown to agree with theory for a strongly disordered quasi-one-dimensional conductor.

Hybrid interconnects that employ CNT vias in tandem with copper interconnects offers advantages from a reliability/thermal-management perspective.

Transistors

Semiconducting CNTs have been used to fabricate field effect transistors (CNTFETs), which show promise due to their superior electrical characteristics over silicon based MOSFETs. Since the electron mean free path in SWCNTs can exceed 1 micrometer, long channel CNTFETs exhibit near-ballistic transport characteristics, resulting in high speed devices. CNT devices are projected to operate in the frequency range of hundreds of Gigaherz. Recent work detailing the advantages and disadvantages of various forms of CNTFETs have also shown that tunneling CNTFET offers better characteristics compared to other CNTFET structures. This device has been found to be superior in terms of subthreshold slope - a very important property for low power applications.[27][28][29][30][31][32]

Nanotubes are usually grown on nanoparticles of magnetic metal (Fe, Co) that facilitates production of electronic (spintronic) devices. In particular control of current through a field-effect transistor by magnetic field has been demonstrated in such a single-tube nanostructure.[33]

Electronic design and design automation

Although CNT devices and interconnects separately have been shown to be promising in their own respects, there have been few efforts to combine them in a realistic circuit. Most CNTFET structures employ the silicon substrate as a back gate. Applying different back gate voltages might become a concern when designing large circuits out of these elements. Several top-gated structures have also been demonstrated, which can alleviate this concern. Recently, a fully integrated logic circuit built on a single nanotube was reported. This circuit employs a back-gate. Several process-related challenges need to be addressed before CNT-based devices and interconnects can enter mainstream VLSI manufacturing. Remaining problems include purification, separation, control over length, chirality and desired alignment, low thermal budget and high contact resistance. Innovative ideas have been proposed to build practical transistors out of nano-networks. Since lack of control on chirality produces a mix of metallic as well as semi-conducting CNTs from any fabrication process and it is difficult to control the growth direction of the CNTs, easily-produced random arrays of SWCNTs have been proposed to build thin film transistors. This idea can be further exploited to build practical CNT based transistors and circuits without the need for precise growth and assembly.

Medicine

Research at University of California, Riverside has shown that carbon nanotubes are suitable scaffold materials for osteoblast proliferation and bone formation.[34]

References

Specific references:

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